Volume 8, Issue 1, March 2020, Page: 9-15
Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design
Hsu Myat Tin Swe, Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar; Department of Electronic Engineering, Technological University (Taungoo), Taungoo, Myanmar
Hla Myo Tun, Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Maung Maung Latt, Department of Electronic Engineering, Technological University (Taungoo), Taungoo, Myanmar
Received: Mar. 16, 2020;       Accepted: Apr. 1, 2020;       Published: Apr. 13, 2020
DOI: 10.11648/j.nano.20200801.12      View  309      Downloads  83
The paper presents the analysis of Quantum-well Heterojunction Emitted Bipolar Transistor Design based on physical parameters with numerical computations. The specific objective of this work is to enhance the physical performance of the Quantum-well Heterojunction Emitted Bipolar Transistor Design in real world applications. There have been considered on the III-V compound materials like GaAs for p-type layer, AlGaAs for n-type layer and InGaAs for quantum-well layer for different kinds of junctions which were developed in HEBT structure. In this analyses, the parameters for implemented HEBT structure were evaluated to find the multi-quantum-well band diagram, operating frequency (unity beta frequency), rise time, storage delay time, fall time, minority carrier distribution, current gain variation, voltage-current characteristics and phonon control on quantum-well device. In these analyses, the physical parameters were carried out based on the experimental studies from the recent research works and many literatures. The physical parameters which used in this HEBT structure have been provided to solve the real fabrication problems by using theoretical concepts. The quantum-well device based on III-V compound materials was performed by using numerical techniques with the help of MATLAB. The simulation results confirm that the developed HEBT structure was suitable for fabricating the real devices for high performance applications.
Quantum-well Structure, III-V Compound, Heterojunction Emitter Bipolar Transistor, Semiconductor Device Fabrication, Numerical Analysis, MATLAB
To cite this article
Hsu Myat Tin Swe, Hla Myo Tun, Maung Maung Latt, Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design, American Journal of Nano Research and Applications. Vol. 8, No. 1, 2020, pp. 9-15. doi: 10.11648/j.nano.20200801.12
Copyright © 2020 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Hsu Myat Tin Swe, Hla Myo Tun "Multi-Quantum Well Design for Heterojunction Emitter Bipolar Transistors (HEBTs)" Published in International Journal of Trend in Research and Development (IJTRD), ISSN: 2394-9333, Volume-7 | Issue-1, February 2020, URL: http://www.ijtrd.com/papers/IJTRD 21950.pdf.
Hsu Myat Tin Swe, Hla Myo Tun, Myint Myint Than, Maung Maung Latt, “Design of Quantum-Well Heterojunction Biploar Transistor Based on Physical Parameters, International Conference on Science, Technology, and Management (ICSTM), Singapore, 2nd-3rd April 2020.
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