Volume 6, Issue 2, June 2018, Page: 34-53
Review of GaN/ZnO Hybrid Structures Based Materials and Devices
Ahmed Mohammed Nahhas, Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia
Received: May 10, 2018;       Accepted: May 28, 2018;       Published: Jun. 15, 2018
DOI: 10.11648/j.nano.20180602.11      View  820      Downloads  99
Abstract
This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.
Keywords
GaN, ZnO, Nanostructured, Hybrid, Light Emitting Diodes, Nanowires, Multiple Quantum Wells (MQW), UV
To cite this article
Ahmed Mohammed Nahhas, Review of GaN/ZnO Hybrid Structures Based Materials and Devices, American Journal of Nano Research and Applications. Vol. 6, No. 2, 2018, pp. 34-53. doi: 10.11648/j.nano.20180602.11
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Copyright © 2018 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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